MTP10N40E |
RFQ for MTP10N40E Required Field |
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| Product | Manufacturers | Pack | D/C |
| MTP10N40E | - | TO | - |
This advanced high voltage TMOS EFET is designed to withstand high energy in the avalanche mode and switch efficiently.This new high energy device also offers a draintosource diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal SourcetoDrain Diode Designed to Replace External Zener Transient Suppressor - Absorbs High Energy in the Avalanche Mode
• SourcetoDrain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
|
Parameter |
Symbol |
Value |
Unit |
| DraintoSource Voltage |
VDSS |
60 |
Vdc |
| DraintoGate Voltage (RGS = 1.0 M) |
VDGR |
60 |
Vdc |
| GateSource Voltage - Continuous GateSource Voltage - Nonrepetitive |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current - Continuous Drain Current - Pulsed |
ID IDM |
10 40 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
1.25 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ,Tstg |
55 to 150 |
°C |
